共面介质阻挡放电蒸发聚四氟乙烯沉积碳氟膜的研究
共面介质阻挡放电蒸发聚四氟乙烯沉积碳氟膜的研究王惠 吴庆浩 朱爱民大连教育学院,辽宁大连116021 大连理工大学三束材料改性国家重点实验室,辽宁大连116024
摘 要:首次将共面型介质阻挡放电（C—DBD）应用于蒸发聚四氟乙烯（PTFE）并沉积制备了碳氟膜，制备的碳氟膜尺寸为50～100nm，其表面均方根（RMS）粗糙度为15．55nm（测量面积为10μm×10μm）。发射光谱表明，C—DBD产生了能量较高的电子激发态Ar原子（12．9～13．5eV）。该方法装置简单，在常温常压下操作，薄膜沉积速率快，而且环境友好．[著者文摘]
关键词:介质阻挡放电 蒸发 碳氟膜 聚四氟乙烯
分类号: O61[著者标引]文献标识码：A文章编号：1000-1832（2009）02-0106-04栏目信息：
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Atmospheric-pressure deposition of CFx films from PTFE evaporated by coplanar dielectric barrier dischargeWANG Hui ,WU Qing-hao ,ZHU Ai-min1. Dalian College of Education, Dalian 116021, China 2. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams,Dalian University of Technology,Dalian 116024,ChinaAbstract:Deposition of CFx films from PTFE evaporation employing coplanar dielectric barrier discharge （C-DBD） was reported＇for the first time. Using this approach,CFx films composed of 50～100 nm particles have been prepared. The statistical root mean square roughness of the CFx films was 15.55 nm for a measured area of 10 μm× 10μm. Based upon the results of optical emission spectra diagnosis,it can be concluded that electronically excited-state Ar atoms possessing 12.9～ 13.5 eV energy are generated abundantly by C-DBD. C-DBD is a fit discharge for evaporating PTFE and depositing CFx films. This approach reported here exhibits many applicative advantages such as being a simple, low-cost and fast deposition,operation under pressure and at room temperature and environmentay benign.[著者文摘]
Key words:dielectric barrier discharge; evaporation; CFx film; PTFE
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