共面介质阻挡放电蒸发聚四氟乙烯沉积碳氟膜的研究

Teflon

共面介质阻挡放电蒸发聚四氟乙烯沉积碳氟膜的研究
王惠[1,2] 吴庆浩[2] 朱爱民[2][1]大连教育学院,辽宁大连116021 [2]大连理工大学三束材料改性国家重点实验室,辽宁大连116024

摘　要:首次将共面型介质阻挡放电（C—DBD）应用于蒸发聚四氟乙烯（PTFE）并沉积制备了碳氟膜，制备的碳氟膜尺寸为50～100nm，其表面均方根（RMS）粗糙度为15．55nm（测量面积为10μm×10μm）。发射光谱表明，C—DBD产生了能量较高的电子激发态Ar原子（12．9～13．5eV）。该方法装置简单，在常温常压下操作，薄膜沉积速率快，而且环境友好．[著者文摘]

关键词:介质阻挡放电 蒸发 碳氟膜 聚四氟乙烯
分类号:　O61[著者标引]文献标识码：A文章编号：1000-1832（2009）02-0106-04栏目信息：
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Atmospheric-pressure deposition of CFx films from PTFE evaporated by coplanar dielectric barrier dischargeWANG Hui ,WU Qing-hao ,ZHU Ai-min1. Dalian College of Education, Dalian 116021, China 2. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams,Dalian University of Technology,Dalian 116024,ChinaAbstracteposition of CFx films from PTFE evaporation employing coplanar dielectric barrier discharge （C-DBD） was reported＇for the first time. Using this approach,CFx films composed of 50～100 nm particles have been prepared. The statistical root mean square roughness of the CFx films was 15.55 nm for a measured area of 10 μm× 10μm. Based upon the results of optical emission spectra diagnosis,it can be concluded that electronically excited-state Ar atoms possessing 12.9～ 13.5 eV energy are generated abundantly by C-DBD. C-DBD is a fit discharge for evaporating PTFE and depositing CFx films. This approach reported here exhibits many applicative advantages such as being a simple, low-cost and fast deposition,operation under pressure and at room temperature and environmentay benign.[著者文摘]

Key words:dielectric barrier discharge; evaporation; CFx film; PTFE