Atmospheric-pressure deposition of CFx films from PTFE evaporated by coplanar dielectric barrier dischargeWANG Hui ,WU Qing-hao ,ZHU Ai-min1. Dalian College of Education, Dalian 116021, China 2. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams,Dalian University of Technology,Dalian 116024,ChinaAbstracteposition of CFx films from PTFE evaporation employing coplanar dielectric barrier discharge （C-DBD） was reported＇for the first time. Using this approach,CFx films composed of 50～100 nm particles have been prepared. The statistical root mean square roughness of the CFx films was 15.55 nm for a measured area of 10 μm× 10μm. Based upon the results of optical emission spectra diagnosis,it can be concluded that electronically excited-state Ar atoms possessing 12.9～ 13.5 eV energy are generated abundantly by C-DBD. C-DBD is a fit discharge for evaporating PTFE and depositing CFx films. This approach reported here exhibits many applicative advantages such as being a simple, low-cost and fast deposition,operation under pressure and at room temperature and environmentay benign.[著者文摘]
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发表于 2012-7-10 20:57:12
eposition of CFx films from PTFE evaporation employing coplanar dielectric barrier discharge （C-DBD） was reported＇for the first time. Using this approach,CFx films composed of 50～100 nm particles have been prepared. The statistical root mean square roughness of the CFx films was 15.55 nm for a measured area of 10 μm× 10μm. Based upon the results of optical emission spectra diagnosis,it can be concluded that electronically excited-state Ar atoms possessing 12.9～ 13.5 eV energy are generated abundantly by C-DBD. C-DBD is a fit discharge for evaporating PTFE and depositing CFx films. This approach reported here exhibits many applicative advantages such as being a simple, low-cost and fast deposition,operation under pressure and at room temperature and environmentay benign.[著者文摘]
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